Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

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• 作者：R. N. Jacobs ; M. Jaime Vasquez ; C. M. Lennon ; C. Nozaki…
• 关键词：Stress ; thin ; film ; curvature ; HgCdTe ; MBE ; CdTe ; Si ; GaAs ; alternate substrate
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：September 2015
• 年：2015
• 卷：44
• 期：9
• 页码：3076-3081
• 全文大小：776 KB
• 参考文献：1.R.N. Jacobs, L.A. Almeida, J. Markunas, J. Pellegrino, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, S.B. Qadri, T. Lee, and M. Kim, J. Electron. Mater. 37, 1480 (2008).CrossRef
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• 作者单位：R. N. Jacobs (1)
  M. Jaime Vasquez (1)
  C. M. Lennon (1)
  C. Nozaki (1)
  L. A. Almeida (1)
  J. Pellegrino (1)
  J. Arias (2)
  C. Taylor (3)
  B. Wissman (3)
  
  1. U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA
  2. CACI Inc., Arlington, VA, USA
  3. K-Space Associates, Inc., Dexter, MI, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures. Keywords Stress thin-film curvature HgCdTe MBE CdTe Si GaAs alternate substrate