Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector

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• 作者：Xianghui Zhang (1)
  Xiangyun Han (12)
  Jun Su (1)
  Qi Zhang (1)
  Yihua Gao (1) gaoyihua@hust.edu.cn
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2012
• 出版时间：May 2012
• 年：2012
• 卷：107
• 期：2
• 页码：255-260
• 全文大小：948.7 KB
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• 作者单位：1. Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science & Engineering, Huazhong University of Science and Technology, Wuhan, 430074 Hubei, People鈥檚 Republic of China2. Chongqing Police College, Chongqing, 401331 People鈥檚 Republic of China
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

Well-crystallized ZnO nanowire arrays were grown on GaN/sapphire by one-step chemical vapor deposition under control of the fabrication pressure of 1000–2500 Pa and the best-aligned arrays were obtained at 1000 Pa. A photoluminescence study shows a red shift with nanowire diameter increase. Under 365-nm UV irradiation of 0.3 mW/cm2, the photoresponse study of the best ZnO arrays shows an ultra-fast tri-exponential rise with three constants of 0.148, 0.064 and 0.613 s, and a bi-exponential decay behavior with two recovery constants of 30 and 270 ms. The ZnO/GaN heterojunction barriers could be responsible for the ultra-fast tri-exponential rise and bi-exponential decay behavior.