N-doped Zn15Sb85 phase-change materials for higher thermal stability and lower power consumption

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• 作者：Xiaoqin Zhu (1)
  Yifeng Hu (1)
  Jianzhong Xue (1)
  Yongxing Sui (1)
  Weihua Wu (1)
  Long Zheng (1)
  Li Yuan (1)
  Sannian Song (2)
  Zhitang Song (2)
  Shunping Sun (3)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2014
• 出版时间：July 2014
• 年：2014
• 卷：25
• 期：7
• 页码：2943-2947
• 全文大小：
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• 作者单位：Xiaoqin Zhu (1)
  Yifeng Hu (1)
  Jianzhong Xue (1)
  Yongxing Sui (1)
  Weihua Wu (1)
  Long Zheng (1)
  Li Yuan (1)
  Sannian Song (2)
  Zhitang Song (2)
  Shunping Sun (3)
  
  1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213001, China
  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
  3. School of Materials Engineering, Jiangsu University of Technology, Changzhou, 213001, China
  
• ISSN：1573-482X

文摘

Comparing to un-doped Zn15Sb85 material, N-doped Zn15Sb85 material had higher crystallization temperature, lower conductivity and better data retention. The optical band gap was derived from the transmittance spectra and a significant increase was observed with increasing nitrogen doping concentration. The measurement of atomic force microscopy indicated that the crystallization was inhibited and the surface of thin films became smoother after N doping. Phase change memory devices based on N-doped Zn15Sb85 thin film were fabricated to test and verify their electrical properties.