Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

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• 作者：Ye Jia ; Joshua S. Wallace ; Yueling Qin…
• 关键词：m ; Plane indium nitride ; band offset ; x ; ray photoelectron spectroscopy
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：45
• 期：4
• 页码：2013-2018
• 全文大小：1,342 KB
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• 作者单位：Ye Jia (1)
  Joshua S. Wallace (2)
  Yueling Qin (3)
  Joseph A. Gardella Jr. (2)
  Amir M. Dabiran (4)
  Uttam Singisetti (1)
  
  1. Electrical Engineering Department, University at Buffalo, Buffalo, NY, 14260, USA
  2. Chemistry Department, University at Buffalo, Buffalo, NY, 14260, USA
  3. Integrated Nanostructured Systems Initiative, University at Buffalo, Buffalo, NY, 14260, USA
  4. SVT Associates, Eden Prairie, MN, 55344, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.