Effect of near surface inverse doping on graphene silicon heterojunction solar cell

详细信息    查看全文

• 作者：Yawei Kuang ; Debao Zhang ; Yulong Ma ; Yushen Liu…
• 关键词：Graphene ; Schottky solar cell ; Inverse doping
• 刊名：Optical and Quantum Electronics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：48
• 期：3
• 全文大小：1,524 KB
• 参考文献：Behura, S.K., Mahala, P., Ray, A., Mukhopadhyay, I.: Theoretical simulation of photovoltaic response of graphene-on-semiconductors. Appl. Phys. A 111(4), 1159–1163 (2013)ADS CrossRef
  Chand, S., Kaushal, P., Osvald, J.: Numerical simulation study of current–voltage characteristics of a Schottky diode with inverse doped surface layer. Mater. Sci. Semicond. Process. 16(2), 454–460 (2013)CrossRef
  Kordoš, P., Marso, M., Meyer, R., Lüth, H.: Schottky barrier height enhancement on n-In0. 53Ga0. 47As. J. Appl. Phys. 72(6), 2347–2355 (1992)ADS CrossRef
  Kuang, Y., Liu, Y., Ma, Y., Xu, J., Yang, X., Hong, X.: Modeling and design of graphene GaAs junction solar cell. Adv. Condens. Matter Phys. 2015, 326384 (2015)
  Kuang, Y., Liu, Y., Ma, Y., Hong, X., Yang, X.: Theoretical study on graphene silicon heterojunction solar cell. J. Nanoelectron. Optoelectron. 10(5), 611–615 (2015)CrossRef
  Li, X., Zhu, H., Wang, K., Cao, A., Wei, J., Wu, D.: Graphene-on-silicon Schottky junction solar cells. Adv. Mater. 22(25), 2743–2748 (2010)CrossRef
  Li, Y.F., Yang, W., Tu, Z.Q., Liu, Z.C., Yang, F., Zhang, L.Q.: Schottky junction solar cells based on graphene with different numbers of layers. Appl. Phys. Lett. 104(4), 043903 (2014)ADS CrossRef
  Liu, S., Yuan, X., Wang, P., Chen, Z.G., Tang, L., Zhang, E., Chen, C.: Controllable growth of vertical heterostructure GaTe × Se1 – x/Si by molecular beam epitaxy. ACS Nano 9(8), 8592–8598 (2015a)CrossRef
  Liu, Z., Xu, J., Chen, D., Shen, G.: Flexible electronics based on inorganic nanowires. Chem. Soc. Rev. 44(1), 161–192 (2015b)CrossRef
  Lucky, Wu, G.J., et al.: The Semiconductor Device Physics, pp. 232–256. Xi’an Jiaotong University Press, Xi’an (2008)
  Miao, J., Hu, W., Guo, N., Lu, Z., Liu, X., Liao, L., Wang, L.: High responsivity Graphene/InAs nanowire heterojunction near infrared photodetectors with distinct photocurrent on/off ratios. Small 11(8), 936–942 (2015)CrossRef
  Ponpon, J.P., Siffert, P.: Open-circuit voltage of MIS silicon solar cells. J. Appl. Phys. 47(7), 3248–3251 (1976)ADS CrossRef
  Shannon, J.M.: Reducing the effective height of a Schottky barrier using low-energy ion implantation. Appl. Phys. Lett. 24(8), 369–371 (1974)ADS CrossRef
  Shannon, J.M.: Control of Schottky barrier height using highly doped surface layers. Solid-State Electron. 19(6), 537–543 (1976)ADS CrossRef
  Wang, L., Jie, J., Shao, Z., Zhang, Q., Zhang, X., Wang, Y., Lee, S.T.: MoS2/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible-near infrared photodetectors. Adv. Funct. Mater. 25(19), 2910–2919 (2015)CrossRef
  Wu, C.Y.: Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer. J. Appl. Phys. 51(9), 4919–4922 (1980)ADS CrossRef
  Wu, Y., Zhang, X., Jie, J., Xie, C., Zhang, X., Sun, B.: Graphene transparent conductive electrodes for highly efficient silicon nanostructures-based hybrid heterojunction solar cells. J. Phys. Chem. C 117(23), 11968–11976 (2013)CrossRef
  Xie, C., Jie, J., Nie, B., Yan, T., Li, Q., Lv, P.: Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires junctions. Appl. Phys. Lett. 100(19), 193103 (2012)ADS CrossRef
  Yuan, X., Tang, L., Wang, P., Chen, Z., Zou, Y., Su, X., Chen, F.: Wafer-scale arrayed pn junctions based on few-layer epitaxial GaTe. Nano Res. 8(10), 3332–3341 (2015)CrossRef
  Zheng, Q.B., Gudarzi, M.M., Wang, S.J., Geng, Y., Li, Z., Kim, J.K.: Improved electrical and optical characteristics of transparent graphene thin films produced by acid and doping treatments. Carbon 49(9), 2905–2916 (2011)CrossRef
  
• 作者单位：Yawei Kuang (1) (2) (3)
  Debao Zhang (2)
  Yulong Ma (2)
  Yushen Liu (2)
  Zhenguang Shao (2)
  Xuekun Hong (2)
  Xifeng Yang (2)
  Jinfu Feng (2)
  
  1. Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, 213164, China
  2. School of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, 215500, China
  3. Centre for Optical and Electromagnetic Research, Zhejiang University, Hangzhou, 310058, China
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

Two dimensional model of graphene silicon heterojunction solar cell with an inverse doped surface layer is structured using Silvaco TCAD tools by accurate control of ion implantation parameters such as ion beam energy and implantation dose. The I–V characteristics show that the performance of solar cell strongly depends on the inverse layer and doping concentrations. Due to the increase of effective barrier height, the collecting rate of minority carrier generated deep in silicon crystal is enhanced, which is shown by hole current density distribution at Y direction and evidenced by IQE analyses. The obtained maximum efficiency is 0.7332 % at implantation dose of 1e15 cm−2, which is improved significantly compared with normal structure.