文摘
This work establishes the high-temperature properties of In-doped ZnSb thin films prepared by a multistep cosputtering method on flexible substrates. The microstructure and thermoelectric properties of the In-doped ZnSb thin films were investigated. X-Ray diffraction results indicated that the main peaks of the In-doped ZnSb thin films were related to ZnSb phase, with some nanocrystallization on the surface after In doping. All samples exhibited p-type conduction behavior, with increased Seebeck coefficient after In doping. The thermal conductivity decreased sharply for the In-doped samples with nanocrystallization, resulting in a ZT value almost six times higher than for undoped ZnSb thin film.