Numerical algorithm of thermal analysis in 3D IC.

详细信息   

• 作者：Oh ; Dongkeun Thomas.
• 学历：Doctor
• 年：2011
• 导师：Hu, Yu Hen,eadvisor
• 毕业院校：The University of Wisconsin
• ISBN：9781267055064
• CBH：3488574
• Country：USA
• 语种：English
• FileSize：4680486
• Pages：104

文摘

With the everlasting drive for packing more devices per unit volume of modern integrated circuits ICs), heat dissipation has become an overarching limiting factor hindering such an effort. This problem is exacerbated with the emergence of 3D IC where multiple layers of substrates stacking one another to further increasing device density. To assist developing modern IC design, high resolution, full chip thermal simulation becomes an indispensible tool. Existing thermal simulation algorithms often require excessive amount of computation resources to produce acceptable results. Recently, an analytical thermal simulation method based on the Greens function solution of a Poisson equation has been developed. This research aims at expanding the applicability of the analytical thermal simulation method by developing novel numerical thermal simulation algorithms. First, for applications where high resolution thermal profile is needed only for a small portion of the chip area, a hierarchical thermal simulation method is proposed. It is based on the observation that the thermal resistance between a far apart power source and current mesh grid is relatively small. Secondly, for ICs with heterogeneous thermal conductivity distribution, such as 3D ICs equipped with thermal through silicon vial TSV), a virtual power source VPS) method is proposed. Their impacts on the chip temperature distribution are modeled as those of virtual power sources in a thermally homogeneous substrate. The fast analytical thermal simulation method can be applied to speed-up computation while delivering accurate temperature profile of a thermally heterogeneous substrate.