Nbb>2b>Ob>5b> doping effect on electrical properties of ZnO-Vb>2b>Ob>5b>-Mnb>3b>Ob>4b> varistor ceramics
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摘要
The microstructure and electrical properties of ternary ZnO-Vb>2b>Ob>5b>-Mnb>3b>Ob>4b> varistor ceramics modified with Nbb>2b>Ob>5b> were systematically investigated for different amounts of Nbb>2b>Ob>5b>. The average grain size for Nbb>2b>Ob>5b>-doped ceramics was larger than Nbb>2b>Ob>5b>-free ceramics and it was in the range of 6.64-7.27 渭m. The sintered density of pellets increased from 5.50 to 5.54 g/cm3 as the Nbb>2b>Ob>5b> amount increased. The breakdown field increased from 947 to 4521 V/cm with an increase in the amount of Nbb>2b>Ob>5b>, whereas a further addition caused it to decrease up to 4374 V/cm at 0.25 mol%. The varistor ceramics doped with 0.05 mol%Nbb>2b>Ob>5b> exhibited the best nonlinear properties, in which the nonlinear coefficient is 47 and the leakage current density is 0.14 mA/cm2.

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