Effects of γ-ray irradiation on the C 13;V and G/ω 13;V characteristics of Al/SiO₂/p-Si (MIS) structures

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• 作者：&#x130 ; lbilge Dö ; kme ; Perihan Durmuş ; Ş ; emsettin Alt&#x131 ; ndal
• 关键词：γ ; -ray effects ; Schottky diodes ; C 13 ; V and G/ω ; 13 ; V characteristics ; Series resistance ; Interface states
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2008
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：March 2008
• 卷：266
• 期：5
• 页码：791-796
• 文件大小：203 K

摘要

The effect of the ⁶⁰C_o (γ-ray) exposure on the electrical characteristics of Al/SiO₂/p-Si (MIS) structures has been investigated using capacitance 13;voltage (C 13;V) and conductance 13;voltage (G/ω 13;V) measurements. The MIS structures were stressed with a bias of 0 V during ⁶⁰C_o γ-sources irradiation with the total dose range from 0 to 25 kGy. The C 13;V and G/ω 13;V characteristics were measured at 500 kHz and room temperature before and after ⁶⁰C_o γ-ray irradiation. The results indicated that γ-irradiation caused an increase in the barrier height Φ_B, interface states N_ss and depletion layer width W_D obtained from reverse bias C 13;V measurements. The series resistance R_s profile for various radiation doses was obtained from forward and reverse bias C 13;V and G/ω 13;V measurements. Both C 13;V and G/ω 13;V characteristics indicate that the total dose radiation hardness of MIS structures may be limited by the decisive properties of the SiO₂/Si interface to radiation-induced damage. After γ-irradiation, the decrease in capacitance of MIS structure results in the increase in the semiconductor depletion width.