摘要
InP/Gdb>2b>Ob>3b> heterostructures have been prepared by molecular beam epitaxy of Gdb>2b>Ob>3b> on InP nanowires grown on silicon substrates by molecular beam epitaxy assisted with the vapor-liquid-solid method. Transmission electron microscopy showed Gdb>2b>Ob>3b> nanocrystals, having diameters between 3 and 7 nm, decorating the sidewalls of InP nanowires. No epitaxial relationship was observed between Gdb>2b>Ob>3b> nanocrystals and InP nanowires due an amorphous interfacial layer. Depending on the Gdb>2b>Ob>3b> growth temperature, two morphologies have been highlighted. For Gdb>2b>Ob>3b> grown at 30 掳C, anisotropic heterostructures made of oxide nanocrystals covering just one side of the nanowires were observed, while at 250 掳C Gdb>2b>Ob>3b>/InP core/shell nanowires were identified.