Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

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• 作者：M. Balaji^a ; ^b ; ^c ; A. Claudel^b ; V. Fellmann^a ; I. Gé ; lard^b ; E. Blanquet^a ; ^{elisabeth.blanquet@simap.grenoble-inp.fr} ; R. Boichot^a ; A. Pierret^d ; ^e ; B. Attal-Tré ; tout^d ; A. Crisci^a ; ^f ; S. Coindeau^a ; ^f ; H. Roussel^f ; D. Pique^b ; K. Baskar^c ; M. Pons^a
• 关键词：68.55.A&minus ; 68.55.&minus ; a ; 68.55.J&minus ; 61.05.cp ; 81.15.Gh ; 81.05.Ea
• 刊名：Journal of Alloys and Compounds
• 出版年：2012
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：15 June, 2012
• 卷：526
• 期：Complete
• 页码：103-109
• 文件大小：1658 K

摘要

AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 掳C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction 胃 鈭?#xA0;2胃 scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 掳C using a NL grown at 850 掳C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 掳C and 1400 掳C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.