Thermal stability of magnetron sputtered amorphous Si₂C

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• 作者：R. Gustus^a ; ^b ; W. Gruber^b ; L. Wegewitz^a ; ^c ; H. Schmidt^b ; ^c ; W. Maus-Friedrichs^a ; ^c ; ^{w.maus-friedrichs@pe.tu-clausthal.de}
• 关键词：61.43.Dq ; 68.55.ag ; 68.37.Ps ; 82.80.Pv ; 68.37.Hk
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 May, 2012
• 卷：258
• 期：15
• 页码：5567-5573
• 文件大小：1105 K

摘要

The thermal stability of amorphous Si₂C films was studied by means of X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), Grazing Incidence X-ray Diffractometry (GIXRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The films were deposited by magnetron sputtering onto silicon single crystals. The as-deposited films show a homogenous amorphous structure with a variety of bonding states reaching from homonuclear silicon-like SiSi over mixed SiSiC to heteronuclear SiC bonds. Annealing at 800 掳C for 1 h leads to a depletion of SiSiC bonding states and to the formation of additional SiC bonds. AFM and SEM images showed particles with a remarkable faceting on the surface of the annealed film. In accordance with GIXRD and AES measurements, these observations confirmed the crystallization of silicon during thermal annealing. Besides, no crystallized silicon carbide could be detected.