Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

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• 作者：R.M.S. dos Reis^a ; R.L. Maltez^a ; ^{maltez@if.ufrgs.br} ; E.C. Moreira^b ; Y.P. Dias^b ; H. Boudinov^a
• 关键词：68.55.ag ; 85.40.Ry ; 78.30.Hv ; 68.37.Lp ; 61.37.Og
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 July, 2012
• 卷：258
• 期：19
• 页码：7395-7400
• 文件大小：965 K

摘要

In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 脳 10¹⁷ cm^鈭? and 4.0 脳 10¹⁷ cm^鈭? carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250 掳C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm^鈭?), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.