A self-assembled room temperature nanowire infrared photodetector based on quantum mechanical wavefunction engineering

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• 作者：Saumil Bandyopadhyay¹ ; Pratik Agnihotri ; Supriyo Bandyopadhyay ; ^{sbandy@vcu.edu}
• 刊名：Physica E
• 出版年：2012
• 期刊代码：139_13869477
• 类别：et
• 出版时间：April-May, 2012
• 卷：44
• 期：7-8
• 页码：1478-1485
• 文件大小：956 K

摘要

A novel electrochemically self-assembled semiconductor nanowire infrared photodetector is demonstrated. Its operation is based on excitation of electrons from shallow trap levels in the bandgap into the conduction band鈥攁 process which prefers photon-induced excitations over phonon-induced excitations because of the nature of the initial and final state wavefunctions. This preference results in a reasonable signal-to-noise ratio (ratio of current under illumination to current in the dark) at room temperature. The signal-to-noise is further increased by integrating the nanowire with a tunnel barrier. The normal detector without the tunnel barrier has a normalized detectivity exceeding 10⁷ cm- at room temperature (at 1 V bias), while the tunnel detector has a times smaller detectivity but also times smaller standby power dissipation and a slightly higher signal-to-noise ratio.