Preparation of (0 2 0)-oriented BaTi₂O₅ thick films and their dielectric responses

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• 作者：Akihiko Ito ; ^{itonium@imr.tohoku.ac.jp} ; Dongyun Guo ; Rong Tu ; Takashi Goto
• 关键词：Films ; BaTiO3 and titanates ; Impedance ; Dielectric properties ; BaTi2O5
• 刊名：Journal of the European Ceramic Society
• 出版年：2012
• 期刊代码：53_09552219
• 类别：ms
• 出版时间：August, 2012
• 卷：32
• 期：10
• 页码：2459-2467
• 文件大小：1183 K

摘要

Barium dititanate (BaTi₂O₅) thick films were prepared on a Pt-coated Si substrate by laser chemical vapor deposition, and ac electric responses of (0 2 0)-oriented BaTi₂O₅ films were investigated using several equivalent electric circuit models. BaTi₂O₅ films in a single phase were obtained at a Ti/Ba molar ratio (m_Ti/Ba) of 1.72-1.74 and deposition temperature (T_dep) of 908-1065 K as well as m_Ti/Ba = 1.95 and T_dep = 914-953 K. (0 2 0)-oriented BaTi₂O₅ films were obtained at m_Ti/Ba = 1.72-1.74 and T_dep = 989-1051 K. BaTi₂O₅ films had columnar grains, and the deposition rate reached 93 渭m h^鈭?. The maximum relative permittivity of the (0 2 0)-oriented BaTi₂O₅ film prepared at T_dep = 989 K was 653 at 759 K. The model of an equivalent circuit involving a parallel combination of a resistor, a capacitor, and a constant phase element well fitted the frequency dependence of the interrelated ac electrical responses of the impedance, electric modulus, and admittance of (0 2 0)-oriented BaTi₂O₅ films.