Unusual critical behavior of the electrical resistivity near the first-order magnetostructural transition of Gd5(Si0.1Ge0.9)4
- 作者：Correia ; F.C. ; Araú ; jo ; J.P. ; Sousa ; J.B. ; Braga ; M.E. ; Morellon ; L. ; Algarabel ; P.A. ; et. al.
- 关键词：61.50.Ks ; 64.70.Kb ; 72.90.+y ; 75.30.Sg ; Magnetocaloric compound ; Magneto-structural first-order transition ; Electrical resistance ; Martensitic transformation
- 刊名：Journal of Magnetism and Magnetic Materials
- 出版年：2004
- 期刊代码：31_03048853
- 类别：ph
- 出版时间：May, 2004
- 卷：272-276
- 期：Part 3
- 页码：2370-2372
- 文件大小：177 K
摘要
We report the temperature dependence of the electrical resistance (R) of Gd5(Si0.1Ge0.9)4 near its (martensitic) magnetostructural transition at TS
84K, over different series of 10–300K thermal cycles (>50). Large hysteresis is observed near TS, with a progressive change in the R(T) behavior and in the residual resistance upon thermal cycling. At intermediate number of cycles (
13–28) a pre-martensitic phase occurs just below TS, with the remarkable property of displaying a universal R(T) behavior.
84K, over different series of 10–300K thermal cycles (>50). Large hysteresis is observed near TS, with a progressive change in the R(T) behavior and in the residual resistance upon thermal cycling. At intermediate number of cycles (13–28) a pre-martensitic phase occurs just below TS, with the remarkable property of displaying a universal R(T) behavior.