Magnetotransport properties of Fe₃O₄ thin films for applications in spin electronics

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• 作者：J.M. De Teresa ; A. Ferná ; ndez-Pacheco ; L. Morellon ; J. Orna ; J.A. Pardo ; D. Serrate ; P.A. Algarabel ; M.R. Ibarra
• 关键词：Nanomagnetism ; Nanoelectronics ; Half metals ; Magnetoresistance ; Hall effect
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：May-August 2007
• 卷：84
• 期：5-8
• 页码：1660-1664
• 文件大小：507 K

摘要

We report the magnetotransport properties of a 40 nm-thick Fe₃O₄ thin film grown on a MgO (0 0 1) substrate by means of pulsed laser deposition, with potential application in Spin Electronics. X-ray diffraction experiments indicate the epitaxial growth with high crystal quality. The resistivity measurements show the anomaly characteristic of the Verwey transition. The magnetoresistance ratios are small as expected for epitaxial Fe₃O₄ thin films and caused by spin-polarized transport through antiphase boundaries. The Hall resistivity is found to be proportional to the magnetization, which strongly suggests that the main contribution comes from the anomalous Hall effect. For the first time on epitaxial Fe₃O₄ thin films, we report the enhancement of the Hall resistivity as the Verwey transition temperature is approached, as had previously been found in bulk single crystals and polycrystalline thick films. Implications of this finding are discussed.