Growth of conductive and insulative highly-orientated aluminum nitride thin films using laser molecular beam epitaxy

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• 作者：Yonghui Wu ; C.H. Jia ; W.F. Zhang ; ^{wfzhang@henu.edu.cn}
• 关键词：Aluminum nitride thin films ; Laser molecular beam epitaxy ; Nitrogen pressure ; Aluminum particles
• 刊名：Diamond and Related Materials
• 出版年：2012
• 期刊代码：30_09259635
• 类别：ms
• 出版时间：May, 2012
• 卷：25
• 期：Complete
• 页码：139-143
• 文件大小：811 K

摘要

Conductive and insulative highly-orientated aluminum nitride thin films were grown on Si (111) and sapphire (0001) substrates using laser molecular beam epitaxy by only changing the nitrogen pressure. The microstructure of AlN films was characterized by X-ray diffraction and scanning electron microscopy, while the electrical and optical properties were measured by current-voltage, capacitance-voltage and ultraviolet-visible-near infrared spectroscopy. The results show that the AlN films deposited under 1 Pa nitrogen pressure are insulative with a resistivity of 10¹¹-10¹² 惟路cm, while they become conductive with a resistivity of 9.3 脳 10^鈭?#xA0;1 惟路cm grown under 2 脳 10^鈭?#xA0;2 Pa because of the presence of aluminum particles. Electric properties of the AlN films are strongly influenced by aluminum particles. The presence of metallic aluminum also decreases the optical transmittance of the AlN films from 85%to 20%.