Improving the electrical and optical properties of DC-sputtered ZnO:Al by thermal post deposition treatments

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• 作者：Mark Wimmer ; ^{mark.wimmer@helmholtz-berlin.de} ; Florian Ruske ; Simone Scherf ; Bernd Rech
• 关键词：Aluminum-doped zinc oxide ; Post deposition treatments ; Transparent conducting oxides
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：2 April, 2012
• 卷：520
• 期：12
• 页码：4203-4207
• 文件大小：561 K

摘要

Thermal post deposition treatments are applied to DC-sputtered aluminum-doped zinc oxide (ZnO:Al) films and lead to a significant improvement of the electrical properties. Protective layers of amorphous silicon are used to protect the films from degradation during the high temperature treatment. Annealing for 6 hours at 500 掳C leads to a carrier mobility of 48 cm²/Vs at a carrier concentration of 5.5 路 10²⁰ cm^鈭?#xA0;3. Furthermore, improvements in the optical as well as in the electrical properties are possible at the same time compared to the as-deposited film. This is achieved by carrying out two thermal treatments to the ZnO:Al film, one prior to the capping with the protective layer and one afterwards. A series of samples with different carrier concentrations allows us to draw conclusions on the specific electrical transport properties.