Size and defect related broadening of photoluminescence spectra in ZnO:Si nanocomposite films

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• 作者：Shabnam^a ; Chhaya Ravi Kant^a ; ^{chhaya_rkant@yahoo.co.in} ; P. Arun^b ; ¹ ; ^{arunp92@physics.du.ac.in}
• 关键词：A. Composites ; A. Oxides ; B. Vapor deposition ; D. Defects ; D. Luminescence
• 刊名：Materials Research Bulletin
• 出版年：2012
• 期刊代码：60_00255408
• 类别：ms
• 出版时间：March, 2012
• 卷：47
• 期：3
• 页码：901-906
• 文件大小：442 K

摘要

Nanocomposite films of zinc oxide and silicon were grown by thermal evaporation technique using varying ratios of ZnO:Si in the starting material. Structural analyses reveal the role of ZnO and amorphous silicon interface in contributing to the relatively less common blue photoluminescence emissions (at 鈭?10 and 470 nm). These blue peaks are observed along with the emissions resulting from band edge transition (370 nm) and those related to defects (520 nm) of ZnO. Careful analysis shows that along with the grain size of ZnO, a suitable compositional ratio of ZnO to silicon is critical for the coexistence of all the four peaks. Proper selection of conditions can give comparable photoluminescence peak intensities leading to broad-band emission.