Morphological and structural properties of InP/Gd₂O₃ nanowires grown by molecular beam epitaxy on silicon substrate

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• 作者：J. Penuelas^a ; ^{jose.penuelas@ec-lyon.fr} ; X. Lu^a ; N.P. Blanchard^b ; G. Saint-Girons^a ; B. Vilquin^a ; P. Cré ; millieu^a ; R. Mazurczyk^a ; M. Gendry^a
• 关键词：A1. Crystal structure ; A1. Nanostructures ; A3. Molecular beam epitaxy ; B1. Oxides
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 May, 2012
• 卷：347
• 期：1
• 页码：49-52
• 文件大小：718 K

摘要

InP/Gd₂O₃ heterostructures have been prepared by molecular beam epitaxy of Gd₂O₃ on InP nanowires grown on silicon substrates by molecular beam epitaxy assisted with the vapor-liquid-solid method. Transmission electron microscopy showed Gd₂O₃ nanocrystals, having diameters between 3 and 7 nm, decorating the sidewalls of InP nanowires. No epitaxial relationship was observed between Gd₂O₃ nanocrystals and InP nanowires due an amorphous interfacial layer. Depending on the Gd₂O₃ growth temperature, two morphologies have been highlighted. For Gd₂O₃ grown at 30 掳C, anisotropic heterostructures made of oxide nanocrystals covering just one side of the nanowires were observed, while at 250 掳C Gd₂O₃/InP core/shell nanowires were identified.