Numerical analysis of the velocity of SiC growth by the top seeding method

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• 作者：F. Inui ; B. Gao ; S. Nakano ; K. Kakimoto ; ^{kakimoto@riam.kyushu-u.ac.jp}
• 关键词：A1. Computer simulation ; A1. Heat transfer ; A1. Substrate ; A2. Solution Growth
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 June, 2012
• 卷：348
• 期：1
• 页码：71-74
• 文件大小：2822 K

摘要

Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si-C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si-C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace.