Analysis of the growth conditions of long single crystalline basal-plane-faceted sapphire ribbons by the Stepanov/EFG technique

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• 作者：A.V. Denisov^a ; A. Molchanov^a ; Yu.O. Punin^b ; V.M. Krymov^c ; G. Mü ; ller^d ; J. Friedrich^d ; ^{jochen.friedrich@iisb.fraunhofer.de}
• 关键词：A1. Defects ; A2. Edge defined film fed growth ; A2. Growth from melt ; A2. Stepanov method ; B1. Sapphire
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 April, 2012
• 卷：344
• 期：1
• 页码：38-44
• 文件大小：1105 K

摘要

The influence of the growth conditions and process parameters on the formation of blocks during growth of basal-plane-faceted single crystalline sapphire ribbons by the Stepanov/EFG technique was investigated. A number of modifications of the crystallization unit were used to vary systematically the crystal growth conditions. The results gave clearly the growth conditions which are favorable to get blocks-free single crystalline basal-plane-faceted sapphire ribbons.