Annealing effect of ZnO/Au/ZnO transparent conductive films
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摘要
Au intermediate ZnO (ZAZ) thin films were prepared by radio frequency and direct current magnetron sputtering on glass substrates and then vacuum annealed. The thickness of each layer of the ZAZ films was set at 50聽nm, 3聽nm, and 47聽nm, respectively. The structural, electrical, and optical properties of ZAZ films were investigated with respect to the variation of annealing temperature.

As-deposited AZO films showed X-ray diffraction peaks corresponding to ZnO (002) and Au (111) planes and those peak intensities increased with post-deposition vacuum annealing. The optical and electrical properties of the films were strongly influenced by post-deposition annealing. Although the optical transmittance of the films deteriorated with an Au interlayer, as-deposited ZAZ films showed a low resistivity of 2.0聽脳聽10鈭?聽惟聽cm, and the films annealed at 300聽掳C had a lower resistivity of 9.8聽脳聽10鈭?聽惟聽cm. The work function of the films increased with annealing temperature, and the films annealed at 300聽掳C had a higher work function of 4.1聽eV than the films annealed at 150聽掳C. The experimental results indicate that vacuum-annealed ZAZ films are attractive candidates for use as transparent electrodes in large area electronic applications such as solar cells and large area displays.

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