MgB₂ films prepared by rapid annealing method

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• 作者：Qian Dai^a ; Xiangdong Kong^b ; ¹ ; Qingrong Feng^a ; ^{qrfeng@pku.edu.cn} ; Qianqian Yang^a ; Huai Zhang^a ; Ruijuan Nie^a ; Li Han^b ; Yanwei Ma^b ; Furen Wang^a ; ^{frwang@pku.edu.cn}
• 关键词：MgB2 superconducting films ; Electron beam annealing ; Rapid annealing
• 刊名：Physica C
• 出版年：2012
• 期刊代码：80_09214534
• 类别：ms
• 出版时间：May, 2012
• 卷：475
• 期：Complete
• 页码：24-27
• 文件大小：343 K

摘要

The experiment for preparing MgB₂ thin films by electron beam (e-beam) annealing of Mg-B multilayer is reported. The annealing process lasts less than 1 s, which effectively suppresses the volatility of Mg as well as the reaction of Mg and oxygen. The influence of annealing parameters on the film quality including exposure time, accelerating voltage and beam current is investigated. It is found that e-beam with lower accelerating voltage can acquire MgB₂ film with smaller annealing energy density. Also, double e-beam scan annealing process helps to obtain more uniform MgB₂ thin films than the single scan. This rapid annealing method synthesizes MgB₂ thin films with critical temperature T_c of 35 K and critical current density J_c at 15 K of 7.6 脳 10⁶ A cm^鈭?.