Electrical properties and leakage current behavior of un-doped and Ti-doped lead zirconate thin films synthesized by sol–gel method

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• 作者：Ebru Mensur Alkoy ; Tadashi Shiosaki
• 关键词：Lead zirconate ; Antiferroelectrics ; Thin film ; Doping ; Leakage current
• 刊名：Thin Solid Films
• 出版年：2008
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：30 April 2008
• 卷：516
• 期：12
• 页码：4002-4010
• 文件大小：1176 K

摘要

Un-doped and Ti-doped (5, 10 and 15 mol%) antiferroelectric and ferroelectric lead zirconate–PbZrO₃ (PZ) thin films were prepared by sol–gel spin coating method. All PZ films crystallized in the perovskite phase with full [111] pseudocubic orientation with a uniform microstructure. The paraelectric–ferroelectric phase transition temperature was found to shift to lower values and the electrical properties were found to degrade as a result of decreasing film thickness. The leakage current of the un-doped PZ films were dominated by the space-charge-limited current, whereas Poole–Frenkel conduction mechanism was found to be dominant at the Ti-doped films at high electric fields.