dc-Hydrogen plasma induced defects in bulk n-Ge

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• 作者：C. Nyamhere^a ; ^{cloud.nyamhere@nmmu.ac.za} ; A. Venter^a ; D.M. Murape^a ; F.D. Auret^b ; S.M.M. Coelho^b ; J.R. Botha^a
• 关键词：Ge ; Hydrogen passivation ; Defects ; DLTS ; L-DLTS
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：1 August, 2012
• 卷：407
• 期：15
• 页码：2935-2938
• 文件大小：380 K

摘要

Bulk antimony doped germanium (n-Ge) has been exposed to a dc-hydrogen plasma. Capacitance-voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by 鈭糰 1.5 orders of magnitude reduction in the free carrier concentration up to depth of 鈭?.2 渭m. DLTS and Laplace-DLTS revealed a prominent electron trap 0.30 eV below the conduction (E_C -0.30 eV). The concentration of this trap increased with plasma exposure time. The depth profile for this defect suggested a uniform distribution up to 1.2 渭m. Annealing studies show that this trap, attributed to a hydrogen-related complex, is stable up to 200 掳C. Hole traps, or vacancy-antimony centers, common in this material after high energy particle irradiation, were not observed after plasma exposure, an indication that this process does not create Frenkel (V-I) pairs.