Dynamical properties of tertiarybutylarsine on GaAs(001) surface
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摘要
The dynamical properties of tertiarybutylarsine (TBA) was studied on GaAs(001) surface using a supersonic molecular beam. The temperature and incident energy dependence of the reflected beam revealed a reaction channel of TBA on GaAs surface with a large decrease in the activation energy from 2.7 to 1.8 eV as the incident energy increases from 0.04 to 2.5 eV.

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