Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy

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• 作者：Adam Duzik^a ; ^{aduzik@umich.edu} ; John C. Thomas^a ; Joanna M. Millunchick^a ; ^{joannamm@umich.edu} ; J. Lå ; ng^b ; M.P.J. Punkkinen^b ; P. Laukkanen^b
• 关键词：Gallium arsenide ; Bismuth ; Surfactant ; Surface reconstruction ; Molecular beam epitaxy ; Scanning tunneling microscopy
• 刊名：Surface Science
• 出版年：2012
• 期刊代码：104_00396028
• 类别：ch
• 出版时间：August, 2012
• 卷：606
• 期：15-16
• 页码：1203-1207
• 文件大小：954 K

摘要

We determine the atomic surface structure of the Bi-terminated GaAs(001) (1 脳 3) reconstruction for the first time using scanning probe microscopies, photoemission spectroscopy, and ab initio calculations. The proposed kinked-dimer (4 脳 3) model is consistent with experimental characterization and can accommodate a variety of species configurations due to an availability of low-energy sites for Bi substitution, accounting for the significant observed local disorder. In addition, experiments show that stability of this reconstruction coincides with a dramatic change in surface step morphology, giving rise to strong up/down step interaction and a counterintuitive smoothing effect on the micrometer length scale.