Epitaxy of In_0.01Ga_0.99As on Ge/offcut Si (001) virtual substrate

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• 作者：Weixuan Hu^a ; Buwen Cheng^a ; ^{cbw@semi.ac.cn} ; Chunlai Xue^a ; Shaojian Su^a ; Zhi Liu^a ; Yaming Li^a ; Qiming Wang^a ; Liangjun Wang^b ; Jiangqing Liu^b ; Jie Ding^b ; Guijiang Lin^b ; Zhidong Lin^b ;
• 关键词：Gallium arsenide ; Germanium ; Silicon substrates ; Chemical vapor deposition ; Metal-organic chemical vapor deposition ; Surface morphology ; Transmission electron microscopy
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 June, 2012
• 卷：520
• 期：16
• 页码：5361-5366
• 文件大小：1413 K

摘要

In_0.01Ga_0.99As thin films free of anti-phase domains were grown on 7掳 offcut Si (001) substrates using Ge as buffer layers. The Ge layers were grown by ultrahigh vacuum chemical vapor deposition using 鈥榣ow/high temperature鈥?two-step strategy, while the In_0.01Ga_0.99As layers were grown by metal-organic chemical vapor deposition. The etch-pit counting, cross-section and plane-view transmission electron microscopy, room temperature photoluminescence measurements are performed to study the dependence of In_0.01Ga_0.99As quality on the thickness of Ge buffer. The threading dislocation density of Ge layer was found to be inversely proportional to the square root of its thickness. The threading dislocation density of In_0.01Ga_0.99As on 300 nm thick Ge/offcut Si was about 4 脳 10⁸ cm^鈭?#xA0;2. Higher quality In_0.01Ga_0.99As can be obtained on thicker Ge/offcut Si virtual substrate. We found that the threading dislocations acted as non-radiative recombination centers and deteriorated the luminescence of In_0.01Ga_0.99As remarkably. Secondary ion mass spectrometry measurement indicated as low as 10¹⁶ cm^鈭?#xA0;3 Ge unintended doping in In_0.01Ga_0.99As.