Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs
摘要
Effects of surface states on gate control characteristics of nano-meter scale Schottky gates formed on GaAs are investigated both theoretically and experimentally. Special sample structures are used. They are metal–insulator–semi-conductor structures having nano-meter scale Schottky dot arrays for capacitance–voltage (C–V) measurements and metal–semi-conductor field effect transistor structures having nano-meter scale grating Schottky gates for current–voltage (I–V) measurements. Measured C–V and I–V results are compared with results of theoretical calculation on a computer.