Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis

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• 作者：D. Tomida^a ; ^{tomida@tagen.tohoku.ac.jp} ; S.F. Chichibu^a ; Y. Kagamitani^a ; Q. Bao^a ; K. Hazu^a ; R. Simura^b ; K. Sugiyama^b ; C. Yokoyama^a ; T. Ishiguro^a ; T. Fukuda^c
• 关键词：A1. Impurity ; A2. Growth from solutions ; A2. Ammonothermal ; B1. Gallium nitrides
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 June, 2012
• 卷：348
• 期：1
• 页码：80-84
• 文件大小：666 K

摘要

In-autoclave synthesis of a gas-phase acidic mineralizer was investigated for high-purity GaN growth by the ammonothermal (AT) method. To reduce oxygen contamination of GaN from highly hygroscopic NH₄Cl powder, purified NH₃ and HCl gases were introduced sequentially fed into a Pt-lined autoclave to synthesize NH₄Cl within the autoclave. The autoclave was pre-charged with GaN seed wafers and polycrystalline precursors, and carefully dehydrated under dynamic vacuum. Because of the decrease in oxygen concentration, the lattice parameter approached the intrinsic value. The Ga-polar layers exhibit a near-band-edge emission peak at room temperature.