Defect structure of Bi_2−xAs_xTe₃ single crystals

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• 作者：D. Bachan ; A. Hovorková ; Č ; . Draš ; ar ; A. Krejč ; ová ; L. Beneš ; J. Horá ; k ; P. Loš ; t’ ; á ; k
• 关键词：A. Chalcogenides ; B. Crystal growth ; D. Transport properties
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2007
• 期刊代码：69_00223697
• 类别：ch
• 出版时间：May-June 2007
• 卷：68
• 期：5-6
• 页码：1079-1082
• 文件大小：232 K

摘要

Single crystals Bi_2−xAs_xTe₃ were prepared by a modified Bridgman technique. The samples were characterized by X-ray diffraction analyses and measurement of Hall coefficient and electrical conductivity. Atomic absorption spectroscopy (AAS) was used for determination of actual content of As in the samples. The doping of Bi₂Te₃ with As leads to a decrease of the free carriers concentration while their mobility increases. The observed effects are discussed within a point defect model of Bi_2−xAs_xTe₃ crystals.