A systematic study on analysis-induced radiation damage in silicon during channeling Rutherford backscattering spectrometry analysis
- 作者：Gwenaë ; lle Gachon ; Michael Martin ; Jesse Carter ; Mark Holl ; er ; Lin Shao
- 关键词：Rutherford backscattering spectrometry ; Ion beam analysis ; Dechanneling ; Displacements
- 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
- 出版年：2008
- 期刊代码：42_0168583x
- 类别：ph
- 出版时间：May 2008
- 卷：266
- 期：10
- 页码：2466-2469
- 文件大小：403 K
摘要
Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced radiation damage in silicon. A 140-keV H+ ion beam was incident along 
1 0 0
Si axis at room temperature to a fluence ranging from 1.6 × 1016 cm−2 to 7.0 × 1016 cm−2. The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us.
1 0 0 Si axis at room temperature to a fluence ranging from 1.6 × 1016 cm−2 to 7.0 × 1016 cm−2. The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us.