Ultra-thin charge selective systems based on MeS_xH_y (Me = In, Cu, Pb)

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• 作者：S. Gavrilov ; Th. Dittrich ; B. Lim ; A. Belaidi ; M. Lux-Steiner
• 关键词：Solar cells ; Ultra-thin absorber ; Heterojunction ; Interfaces ; SILAR deposition
• 刊名：Thin Solid Films
• 出版年：2008
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：30 August 2008
• 卷：516
• 期：20
• 页码：7051-7054
• 文件大小：476 K

摘要

Ultra-thin MeS_xH_y (Me = In, Cu, Pb) heterojunctions were sandwiched between compact TiO₂ and PEDOT:PSS layers. The MeS_xH_y layers were prepared by SILAR (successive ion layer adsorption and reaction). Intensity and temperature dependent current–voltage characteristics were investigated for small area solar cell structures. Highest values of open circuit voltage (0.9 V) were obtained for the In₂S₃/PbIn_xS_yH_z system annealed at moderate temperatures (150–200 °C) while PbIn_xS_yH_z did not act as an absorber. Largest values of short circuit current were reached for the In₂S₃/CuIn_xS_yH_z system in which both layers act as an absorber. The role of Pb and hydrosulfide for interface formation and defect passivation is discussed.