Chemical Deposition and Characterization of Cu₃Se₂ and CuSe Thin Films

详细信息	查看全文 | 推荐本文 |

• 作者：Pejova ; Biljana ; Grozdanov ; Ivan
• 刊名：Journal of Solid State Chemistry
• 出版年：2001
• 期刊代码：130_00224596
• 类别：ch
• 出版时间：April, 2001
• 卷：158
• 期：1
• 页码：49-54
• 文件大小：248 K

摘要

A chemical deposition method for fabrication of Cu₃Se₂ and CuSe thin films is presented. The films' growth is based on the decomposition of selenosulfate in alkaline solution containing a copper(II) salt and a suitable complexing agent. The deposited materials were identified by X-ray diffraction. In addition, optical investigations were performed. The absorption onset in the optical spectra of the annealed Cu₃Se₂ films showed a slight red shift (compared to the as-deposited ones), indicating a very slight increase in the average crystal size. The optical (direct) band gap energy of Cu₃Se₂ thin films is 2.37 eV, while the CuSe thin films are characterized with two direct band gap energies of 2.0 and 2.8 eV. The average crystal size values, calculated on the basis of the recorded XRD patterns, are approximately 40 nm for both Cu₃Se₂ and CuSe thin films.