Patterning of Bi₂O₃ films using laser-induced forward and backward transfer techniques

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• 作者：H. Sakata ; S. Chakraborty¹ ; M. Wakaki ; ^{wakaki@keyaki.cc.u-tokai.ac.jp}
• 关键词：Bi2O3 film ; Laser-induced forward transfer ; Laser-induced backward transfer ; SHG Nd ; YAG laser ; SEM ; AFM
• 刊名：Microelectronic Engineering
• 出版年：2012
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：August, 2012
• 卷：96
• 期：Complete
• 页码：56-60
• 文件大小：1243 K

摘要

Patterning of Bi₂O₃ films was performed by laser-induced forward transfer (LIFT) and backward transfer (LIBT) techniques using the SHG beam of a Nd:YAG pulsed laser. Patterned parallel tracks of the transferred film were obtained on glass sample plates with the 0.14-mm air gap by using these techniques. It was shown from the observation of the track pattern that the LIFT produced unclear track edges and nanoparticle/nanocluster of film material scattered on the glass plate, while the LIBT formed clear track edges and clear transferred surface. It was revealed that the skin depth effect was dominant on the laser irradiation from the estimation of skin depth of the incident laser and the thermal diffusion length of the Bi₂O₃ film. A vapor-driven propulsion of the film was presumed for the LIFT mode from this result, but for the LIBT mode, normal vaporization from uppermost film surface on laser irradiation was considered, which were confirmed by SEM observations and surface roughness calculation of AFM images for LIFT- and LIBT-transferred films. The results revealed the LIBT method was more adequate for the patterning of the Bi₂O₃ film compared with the LIFT method.