Surface modelling of reactive ion etching of silicon–germanium alloys in a SF₆ plasma

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• 作者：Peignon ; M.C. ; Turban ; G. ; Charles ; C. ; Boswell ; R.W.
• 关键词：Si_xGe_1&minus ; x alloys ; RIE ; XPS ; Etching model
• 刊名：Surface and Coatings Technology
• 出版年：1997
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：December, 1997
• 卷：97
• 期：1-3
• 页码：465-468
• 文件大小：132 K

摘要

Reactive ion etching (RIE) of amorphous Si_xGe_1−x alloys (0≤x≤100%) in a low-pressure SF₆ plasma has been investigated by means of quasi in situ X-ray photoelectron spectroscopy. The reactive layer on the etched alloys mainly consists of SiF, GeF, SiS and GeS₂ species. The sulfur and fluorine coverages on both Ge and Si atoms depend on the SiGe alloy stoichiometry in agreement with the nonlinear evolution of the alloy etch rates. A simple etching model where the etch rate is assumed to be proportional to the fluorine coverages has been developed for the description of the Si_xGe_1−x etching mechanism.