Substrate and orientation influence on electrical properties of sputtered La-doped PZT thin films

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• 作者：G. Leclerc ; G. Poullain ; C. Yaicle ; R. Bouregba ; A. Pautrat
• 关键词：PLZT thin films ; Crystallographic orientation ; Multi-target sputtering ; Dielectric properties ; Ferroelectricity
• 刊名：Applied Surface Science
• 出版年：2008
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：30 April 2008
• 卷：254
• 期：13
• 页码：3867-3872
• 文件大小：824 K

摘要

Pb_1−2y/3La_yZr_xTi_1−xO₃ (PLZT) thin films have been prepared “in situ” by multi-target sputtering on Silicon, LaAlO₃ (LAO) and MgO substrates covered with a Pt bottom electrode. The purpose was to grow tetragonal PLZT films (Zr/Ti = 28/72 with different La contents) on these various substrates and to compare their electrical properties. To this aim, Pt was first deposited on the three different substrates to get (1 1 1)Pt/Si, (1 1 1)Pt/LAO and (2 0 0)Pt/MgO. Then PLZT was deposited in a same run on these three kinds of substrates and the influence of La contents and film orientation on electrical properties was investigated. The La content was varied from y = 0 to y = 32 in order to explore the phase transition between ferroelectric and paraelectric phases as a function of the substrate. For large amount of Lanthanum, relaxor behavior has been observed and studied.