摘要
The influence of deposition conditions (pressure, growth rate, solution concentration, etc.) on the growth of ferroelectric PbTiO3 films by pulsed liquid injection MOCVD was examined. Pb(thd)2 and Ti(OiPr)2(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) dissolved in toluene were used as precursors. Films were grown on LaAlO3 (001) substrates for deposition process optimisation. PbTiO3/La1 − xSrxMnO3/LaAlO3 heterostructures were elaborated at optimized deposition conditions. The microstructure of the heterostructures was characterized by X-ray Diffraction and by Raman spectroscopy. Pt/PbTiO3/La1 − xSrxMnO3/LaAlO3 structures were used for ferroelectric, dielectric and piezoelectric characterisations of PbTiO3 films.