Compositionally graded Pb(Zr,Ti)O₃ thin films with different crystallographic orientations

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• 作者：Vilquin ; B. ; Poullain ; G. ; Bouregba ; R. ; Murray ; H.
• 关键词：Ferroelectric properties ; Multilayers ; Oxides ; Sputtering
• 刊名：Thin Solid Films
• 出版年：2003
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：July 31, 2003
• 卷：436
• 期：2
• 页码：157-161
• 文件大小：553 K

摘要

Compositionally graded ferroelectric PbZr_xTi_1−xO₃ (PZT) films were deposited using a sputtering method and crystallized in situ at 500 °C. The films showed purely (100) or (111) crystallographic orientation when grown on Si/SiO₂/TiO₂/Pt substrates, while they exhibited c-axis epitaxial microstructure when prepared on MgO/Pt substrates. Their crystallographic orientation was controlled owing to a thin TiO_x layer sputtered on substrates prior to PZT deposition. Analysis performed by Auger depth profile clearly confirmed the variation of composition in the films. Coercive fields from 80 kV/cm to 200 kV/cm and remnant polarization as large as 45 μC/cm² were obtained. However, no typical offset was observed on hysteresis loops, unlike previous works related to graded PZT films.