Orientation control of textured PZT thin films sputtered on silicon substrate with TiO_x seeding

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• 作者：Bouregba ; R. ; Poullain ; G. ; Vilquin ; B. ; Murray ; H.
• 关键词：A. Oxides ; A. Thin films ; B. Sputtering ; C. X-ray diffraction ; D. Ferroelectricity
• 刊名：Materials Research Bulletin
• 出版年：2000
• 期刊代码：60_00255408
• 类别：ms
• 出版时间：July 1, 2000
• 卷：35
• 期：9
• 页码：1381-1390
• 文件大小：336 K

摘要

In situ deposition of Pb(Zr_0.25Ti_0.75)O₃ thin films by RF magnetron sputtering has been performed at 500°C on Pt/Ti/SiO₂/Si substrates without any postannealing treatment. The growth of PZT is ensured, provided that a thin TiO_x layer is sputtered prior to PZT. Moreover, we find that sputtering Ti in a 100%argon atmosphere leads to highly (100) oriented films, while adding oxygen during sputtering of Ti leads to purely (111) oriented films. Electrical measurements performed on these films show remanent polarization P_r, coercive field E_c, and dielectric constant consistent with their Zr/Ti ratio.