摘要
Monte Carlo simulations have been performed for 2 MeV protons which are planar channelled along the (110) planes of a Si crystal, in which a lattice translation was introduced at different depths to model a stacking fault. Under certain conditions of tilt angle and fault depth, the planar oscillation wavelength of the best channelled beam portion below the fault becomes greater than the wavelength above the fault, and may also be greater than that in a perfect lattice at planar alignment. The conditions under which this behaviour occurs are studied.