Three-dimensional micromachining of silicon using a nuclear microprobe
- 作者：Teo ; E.J. ; Tavernier ; E.P. ; Breese ; M.B.H. ; Bettiol ; A.A. ; Watt ; F. ; Liu ; M.H. ; Blackwood ; D.J.
- 关键词：85.85.+j ; 07.78.+s ; 42.82.Cr ; 61.80.Jh ; 82.80.Fk ; Proton beam writing ; Silicon micromachining ; Electrochemical etching ; Porous silicon
- 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
- 出版年：2004
- 期刊代码：42_0168583x
- 类别：ph
- 出版时间：August, 2004
- 卷：222
- 期：3-4
- 页码：513-517
- 文件大小：433 K
摘要
We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raised microstructure after cleaning in diluted potassium hydroxide solution. The thickness of the porous silicon layer formed depends on the accumulated fluence at each scan point. A relationship between the irradiated fluence and feature height is investigated on a p-type [100] silicon with a resistivity of 0.03 Ωcm using focused 2 MeV helium beam. We use this relationship to micromachine multilevel structures with a single focused helium beam energy.