Synchrotron topography of high temperature–pressure treated silicon implanted with helium

详细信息	查看全文 | 推荐本文 |

• 作者：Misiuk ; A. ; Wierzchowski ; W. ; Wieteska ; K. ; Bryja ; L. ; Graeff ; W.
• 关键词：61.10.&minus ; i ; 62.50.+p ; 66.30.&minus ; h ; 71.20.Mg ; Helium implanted Si ; High temperature-pressure ; Strain ; Synchrotron
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2003
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：January, 2003
• 卷：200
• 期：Complete
• 页码：358-362
• 文件大小：230 K

摘要

Silicon implanted with He⁺ at 150 keV to a dose 5×10¹⁶ cm⁻² (Si:He) and treated at high temperature (up to 1270 K) and pressure (up to 1.2 GPa) was investigated using synchrotron X-ray topography, rocking curve and photoluminescence measurements.