Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O3 thin films grown by the soft chemical method
- 作者：I.A. Souza ; A.Z. Simõ ; es ; S. Cava ; L.S. Cavalcante ; M. Cilense ; E. Longo and J.A. Varela
- 关键词：Crystallization ; Film deposition ; Space charge effects ; Thin films
- 刊名：Journal of Solid State Chemistry
- 出版年：2006
- 期刊代码：130_00224596
- 类别：ch
- 出版时间：October 2006
- 卷：179
- 期：10
- 页码：2972-2976
- 文件大小：216 K
摘要
Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C–V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C–V curves and confirmed by the hysteresis curve, showed remnant polarization of and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to . This work clearly reveals the highly promising potential of BST:Sn for application in memory devices.