Structure analysis of the Si(111)-√3×√3-Sb surface by means of CAICISS combined with LEED–AES–RBS techniques

详细信息	查看全文 | 推荐本文 |

• 作者：Kishi ; N. ; Morita ; K.
• 关键词：68.43.Fg ; 68.49 ; Ion beam structure analysis ; CAICISS ; Si(111)-&radic ; 3× ; &radic ; 3-Sb ; RBS
• 刊名：Current Applied Physics
• 出版年：2003
• 期刊代码：15_15671739
• 类别：ph
• 出版时间：February, 2003
• 卷：3
• 期：1
• 页码：57-60
• 文件大小：170 K

摘要

The composition and atomic arrangement of the Si(111)-√3×√3-Sb surface have been studied by means of co-axial impact collision ion scattering spectroscopy combined with low energy electron diffraction, Auger electron spectroscopy and Rutherford backscattering spectrometry techniques. It is found that the Sb/Si(111) surface forms the √3×√3 structure at a coverage of 0.90 ML, which is determined by RBS. The azimuthal angle scan is also found to show prominent focussing peaks at ±12° around the (112) planes at a polar angle of 13°. It is determined from the azimuthal angle scan that the Si(111)-√3×√3-Sb surface forms the trimer centered at the T₄ site and the spacing of Sb–Sb in the trimer is 2.8±0.05 Å.