2DEG based on strained Si on SGOI substrate

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• 作者：L. Di Gaspare ; A. Notargiacomo ; E. Giovine ; M. De Seta ; G. Capellini ; M. Pea ; G. Ciasca ; F. Evangelisti
• 关键词：SiGe heterostructure ; SGOI ; 2DEG
• 刊名：Physica E
• 出版年：2008
• 期刊代码：139_13869477
• 类别：et
• 出版时间：March 2008
• 卷：40
• 期：5
• 页码：1611-1613
• 文件大小：130 K

摘要

We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pre-growth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 10⁵ cm² V⁻¹ s⁻¹ at T=0.4 K and 2000 cm² V⁻¹ s⁻¹ at T=300 K was obtained.