Growth of void-free 3C-SiC films by modified two-step carbonization methods

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• 作者：Jianfeng Su^a ; ^{sujianfengvy@gmail.com} ; Qiang Niu^a ; Chunjuan Tang^a ; Yongsheng Zhang^a ; Zhuxi Fu^b
• 关键词：3C-SiC films ; LPCVD ; Two-step carbonization ; Microstructure
• 刊名：Solid State Sciences
• 出版年：2012
• 期刊代码：98_12932558
• 类别：ch
• 出版时间：April, 2012
• 卷：14
• 期：4
• 页码：545-549
• 文件大小：675 K

摘要

Highly preferred orientation 3C-SiC films were deposited on Si (111) substrates by a modified two-step carbonization method. The crystal quality of SiC films were examined by XRD. To evaluate the effect of the introducing of silane during carbonization, cross-sectional SEM was carried out. Results indicated that the introducing of silane during carbonization is effective to prevent the out-diffusion of silicon atoms from silicon substrates. And by adjusting the carbonization conditions, void-free 3C-SiC films were obtained. XPS results demonstrated that the prepared 3C-SiC films were corresponding with the stoichiometric ratio.