High-voltage operation of silicon devices for LHC experiments

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• 作者：Bacchetta ; N. ; Bisello ; D. ; Candelori ; A. ; Cavone ; M. ; Dalla Betta ; G.-F. ; Da Rold ; M. ; De Liso ; G. ; et. al.
• 刊名：Nuclear Instruments and Methods in Physics Research Section A ; Accelerators ; Spectrometers ; Detectors and Associated Equipment
• 出版年：1998
• 期刊代码：41_01689002
• 类别：ph
• 出版时间：May 21, 1998
• 卷：409
• 期：1-3
• 页码：139-141
• 文件大小：211 K

摘要

High-voltage operation can be a solution to obtain full charge collection in strongly irradiated silicon detectors. The maximum bias voltage which can be applied is limited by the breakdown point of the junction. We show how multiguard structures can enhance the breakdown voltage in p⁺-n silicon devices designed for applications in the LHC environment.